vishay IL211AT/ 212at/ 213at document number 83615 rev. 1.3, 19-apr-04 vishay semiconductors www.vishay.com 1 i179002 1 2 3 4 a k nc nc 8 7 6 5 nc b c e optocoupler, phototransistor output, with base connection in soic-8 package features ? isolation voltage, 3000 v rms industry standard soic-8a surface mountable package compatible with dual wave, vapor phase and ir reflow soldering agency approvals ul - file no. e52744 system code y din en 60747-5-2(vde0884) din en 60747-5-5 pending available with option 1 description the IL211AT/ il212at/ il213at are optically cou- pled pairs with a gallium arsenide infrared led and silicon npn phototransistor. signal information, including a dc level, can be transmitted by the device while maintaining a high degree of electrical isolation between input and output. the IL211AT/ il212at/ il213at comes in a standard soic-8 small outline package for surface mounting which makes it ideally suited for high density applications with limited space. in addition to eliminating through-holes requirements, this package conforms to standards for surface mounted devices. a choice of 20, 50, and 100 % minimum ctr at i f = 10 ma makes these optocouplers suitable for a variety of different applications. order information available only on tape and reel option (conforms to eia standard rs481a) for additional information on the available options refer to option information. absolute maximum ratings t amb = 25 c, unless otherwise specified stresses in excess of the absolute maximum ratings can cause per manent damage to the device. f unctional operation of the device is not implied at these or any other conditions in excess of those given in the operational sections of this document. exposure to absolute maximum rating for extended periods of the time can adversely affect reliability. input part remarks IL211AT ctr > 20 %, soic-8 il212at ctr > 50 %, soic-8 il213at ctr > 100 %, soic-8 parameter test condition symbol value unit peak reverse voltage v r 6.0 v forward continuous current i f 60 ma power dissipation p diss 90 mw derate linearly from 25 1.2 mw/c
www.vishay.com 2 document number 83615 rev. 1.3, 19-apr-04 vishay IL211AT/ 212at/ 213at vishay semiconductors output coupler electrical characteristics t amb = 25 c, unless otherwise specified minimum and maximum values are testing requirements. typical val ues are characteristics of the device and are the result of eng ineering evaluation. typical values are for information only and are not part of the testing requirements. input output coupler parameter test condition symbol value unit collector-emitter breakdown voltage bv ceo 30 v emitter-collector breakdown voltage bv eco 7.0 v collector-base breakdown voltage v ceo 70 v i cmax dc i cmax dc 50 ma i cmax t < 1.0 ms i cmax 100 ma power dissipation p diss 150 mw derate linearly from 25 c 2.0 mw/c parameter test condition symbol value unit total package dissipation (led + detector) p tot 240 mw derate linearly from 25 c 3.2 mw/c storage temperature t stg - 55 to +150 c operating temperature t amb - 55 to +100 c soldering time at 260 c 10 sec. parameter test condition symbol min ty p. max unit forward voltage i f = 10 ma v f 1.3 1.5 v reverse current v r = 6.0 v i r 0.1 100 a capacitance v r = 0 c o 13 pf parameter test condition symbol min ty p. max unit collector-emitter breakdown voltage i c = 10 abv ceo 30 v emitter-collector breakdown voltage i e = 10 abv eco 7.0 v collector dark current v ce = 10 v i ceo 5.0 50 na collector-emitter capacitance v ce = 0 c ce 10 pf parameter test condition symbol min ty p. max unit saturation voltage, collector-emitter i f = 10 ma v cesat 0.4 v isolation test voltage 1 sec. v iso 3000 v rms capacitance (input-output) c io 0.5 50 pf resistance input to output r io 100 g ? collector-emitter breakdown voltage i c = 10 abv ceo 30 v
vishay IL211AT/ 212at/ 213at document number 83615 rev. 1.3, 19-apr-04 vishay semiconductors www.vishay.com 3 current transfer ratio switching characteristics typical characteristics (t amb = 25 c unless otherwise specified) parameter test condition part symbol min ty p. max unit current transfer ratio i f = 10 ma, v ce = 5.0 v IL211AT ctr 20 50 % il212at ctr 50 80 % IL211AT ctr 100 130 % parameter test condition symbol min ty p. max unit switching time i c = 2 ma, r l = 100 ? , v cc = 10 v t on , t off 3.0 s fig. 1 forward voltage vs. forward current fig. 2 normalized non-saturated and saturated ctr ce vs. led current iIL211AT_01 i f - forward current - ma 100 10 1 .1 0.7 0.8 0.9 1.0 1.1 1.2 1.3 1.4 v f - forward voltage - v ta = -55c ta = 25c ta = 100c iIL211AT_02 .1 10 100 normalized to: v ce =10 v i f =10 ma t a =25c 1.5 1.0 0.5 0.0 v ce =5v v ce =0.4v i f - led current - ma nctr ce - normalized - ctr ce 1 fig. 3 collector-emitter current vs.led current fig. 4 normalized collector-base photocurrent vs. led current iIL211AT_03 .1 1 10 100 i f - led current - ma i ce - collector-emitter current - ma t a =25c ? v ce =0.4v v ce =10v 150 100 50 0 iIL211AT_04 .1 1 10 100 i f - led current - ma ni cb - normalized i cb normalized to: v cb =9.3v i f =1 ma t a = 25 ?c 100 10 1 .1
www.vishay.com 4 document number 83615 rev. 1.3, 19-apr-04 vishay IL211AT/ 212at/ 213at vishay semiconductors fig. 5 normalized collector-base photocurrent vs. led current fig. 6 collector-base photocurrent vs. led current fig. 7 collector-emitter leakage current vs.temp. iIL211AT_05 .1 1 10 100 i f - led current - ma ni cb - normalized i cb normalized to: v cb =9.3v i f =10 ma t a = 25c 10 1 .1 .01 iIL211AT_06 i f - led current - ma i cb - collector-base current - a t a = 25c v cb =9.3v 1000 100 10 1 .1 .1 1 10 100 iIL211AT_07 t a - ambient temperature - c i ceo - collector-emitter - na 10 5 10 4 10 3 10 2 10 1 10 0 10 -1 10 -2 -20 0 20 40 60 80 100 v ce =10v typical fig. 8 normalized saturated hfe vs. base current and temperature fig. 9 typical switching characteristics vs. base resistance (saturated operation) fig. 10 typical switching times vs. load resistance iIL211AT_08 1 1 0 100 1000 0.0 0.5 1.0 1.5 2.0 25c 50c 70c ib - base current - a nhfe(sat) - normalized saturated hfe vce = 0.4 v ib = 20 a vce=10v ta = 25c normalized to: iIL211AT_09 100 50 10 5 1.0 input: base-emitter resistance, r be ( ? ) t o f f t o n switching time ( s) 10k 50k 100k 500k 1m i f =10 ma pulse width = 100 ms duty cycle = 50% iIL211AT_10 1000 500 100 50 10 5 1 0.1 0.5 1 5 10 50 100 input: i f =10 ma pulse width = 100 ms duty cycle = 50% t off t o n load resistance rl (k ? ) switching time ( s)
vishay IL211AT/ 212at/ 213at document number 83615 rev. 1.3, 19-apr-04 vishay semiconductors www.vishay.com 5 package dimensions in inches (mm) iIL211AT_11 v cc =5 v input v out r l t off t r 10% 50% 90% t s t pdoff t pdon t on t r t d output input 10% 50% 90% 0 0 fig. 11 switching time test schematic and waveform .036 (.91) .014 (.36) .170 (4.32) .045 (1.14) .260 (6.6) r .010 (.13) .050 (1.27) i178003 40 .240 (6.10) .154 .005 (3.91 .13) .050 (1.27) typ. .016 (.41) .192 .005 (4.88 .13) .004 (.10) .008 (.20) lead coplanarity .0015 (.04) max. .015 .002 (.38 .05) .008 (.20) 7 .058 .005 (1.49 .13) .125 .005 (3.18 .13) pin one id .120 .005 (3.05 .13) c l .021 (.53) 5 max. r.010 (.25) max. .020 .004 (.51 .10) 2 plcs. iso method a
www.vishay.com 6 document number 83615 rev. 1.3, 19-apr-04 vishay IL211AT/ 212at/ 213at vishay semiconductors ozone depleting substances policy statement it is the policy of vishay semiconductor gmbh to 1. meet all present and future national and international statutory requirements. 2. regularly and continuously improve the performance of our products, processes, distribution and operatingsystems with respect to their impact on the health and safety of our employees and the public, as well as their impact on the environment. it is particular concern to control or eliminate releases of those substances into the atmosphere which are known as ozone depleting substances (odss). the montreal protocol (1987) and its london amendments (1990) intend to severely restrict the use of odss and forbid their use within the next ten years. various national and international initiatives are pressing for an earlier ban on these substances. vishay semiconductor gmbh has been able to use its policy of continuous improvements to eliminate the use of odss listed in the following documents. 1. annex a, b and list of transitional substances of the montreal protocol and the london amendments respectively 2. class i and ii ozone depleting substances in the clean air act amendments of 1990 by the environmental protection agency (epa) in the usa 3. council decision 88/540/eec and 91/690/eec annex a, b and c (transitional substances) respectively. vishay semiconductor gmbh can certify that our semiconductors are not manufactured with ozone depleting substances and do not contain such substances. we reserve the right to make changes to improve technical design and may do so without further notice. parameters can vary in different applications. all operating parameters must be validated for each customer application by the customer. should the buyer use vishay semiconductors products for any unintended or unauthorized application, the buyer shall indemnify vishay semiconductors against all claims, costs, damages, and expenses, arising out of, directly or indirectly, any claim of personal damage, injury or death associated with such unintended or unauthorized use. vishay semiconductor gmbh, p.o.b. 3535, d-74025 heilbronn, germany telephone: 49 (0)7131 67 2831, fax number: 49 (0)7131 67 2423
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